Semiconductor Device with Air-Spacer

ABSTRACT

A method includes providing a structure having a substrate, a gate structure over the substrate, a sacrificial spacer over a sidewall of the gate structure, a source/drain feature over the substrate and adjacent to the gate structure; forming a dielectric layer over the gate structure, the sacrificial spacer, and the source/drain feature; with the dielectric layer over the gate structure, the sacrificial spacer, and the source/drain feature, forming a contact extending through the dielectric layer to the source/drain feature; removing the dielectric layer to expose the sacrificial spacer; etching the sacrificial spacer to form a trench; and depositing an inter-layer dielectric (ILD) layer, wherein the ILD layer caps the trench, thereby defining an air gap inside the trench.

PRIORITY

This is a continuation application of U.S. patent application Ser. No.15/623,539, filed Jun. 15, 2017, which claims the benefits of U.S. Prov.App. No. 62/434,336, filed Dec. 14, 2016, herein incorporated byreference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling down has also increased the complexity ofprocessing and manufacturing ICs and, for these advancements to berealized, similar developments in IC processing and manufacturing areneeded.

For example, it is generally desired to reduce stray capacitance amongfeatures of field effect transistors, such as capacitance between a gatestructure and source/drain contacts, in order to increase switchingspeed, decrease switching power consumption, and/or decrease couplingnoise of the transistors. Certain low-k materials, with a dielectricconstant lower than that of silicon oxide, have been suggested asinsulator materials providing lower relative permittivity to reducestray capacitance. However, as semiconductor technology progresses tosmaller geometries, the distances between the gate structure andsource/drain contacts are further reduced, resulting in still largestray capacitance. Therefore, although existing approaches in transistorformation have been generally adequate for their intended purposes, theyhave not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flow chart of a method of forming a semiconductor deviceaccording to various aspects of the present disclosure.

FIGS. 2A, 2B, 3, 4, 5, 6, 7, 8A, 8B, and 9 are cross-sectional views ofa portion of a semiconductor device constructed according to the methodin FIG. 1, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure is generally related to semiconductor devices andmethods of forming the same. More particularly, the present disclosureis related to providing methods and structures for lowering straycapacitance between a gate structure and source/drain contacts of fieldeffect transistors (FETs) in semiconductor manufacturing. In the formingof FETs, it is desired to increase switching speed, decrease switchingpower consumption, and decrease coupling noise. Stray capacitancegenerally has a negative impact on these parameters, especially fromstray capacitance between a gate structure and source/drain contacts. Assemiconductor technology progresses to smaller geometries, the distancesbetween the gate and source/drain contacts shrink, resulting in largerstray capacitance. Consequently, stray capacitance in FETs has becomemore problematic. The present disclosure provides solutions in formingair-spacers surrounding gate structures instead of spacersconventionally made of a solid dielectric material, lowering therelative permittivity (or dielectric constant) between the gate andsource/drain contacts and thereby lowering stray capacitance.

FIG. 1 illustrates a flow chart of a method 100 for formingsemiconductor devices according to the present disclosure. The method100 is an example, and is not intended to limit the present disclosurebeyond what is explicitly recited in the claims. Additional operationscan be provided before, during, and after the method 100, and someoperations described can be replaced, eliminated, or relocated foradditional embodiments of the method. The method 100 is described belowin conjunction with FIGS. 2-9, which illustrate cross-sectional views ofa semiconductor device 200 during various fabrication steps according toan embodiment of the method 100. The device 200 may be an intermediatedevice fabricated during processing of an integrated circuit (IC), or aportion thereof, that may comprise static random access memory (SRAM)and/or logic circuits, passive components such as resistors, capacitors,and inductors, and active components such as p-type FETs (pFETs), n-typeFETs (nFETs), FinFETs, metal-oxide semiconductor field effecttransistors (MOSFET), and complementary metal-oxide semiconductor (CMOS)transistors, bipolar transistors, high voltage transistors, highfrequency transistors, other memory cells, and combinations thereof.Furthermore, the various features including transistors, gate stacks,active regions, isolation structures, and other features in variousembodiments of the present disclosure are provided for simplificationand ease of understanding and do not necessarily limit the embodimentsto any types of devices, any number of devices, any number of regions,or any configuration of structures or regions.

At operation 102, the method 100 (FIG. 1) provides a precursor of thedevice 200 (FIG. 2A). For the convenience of discussion, the precursorof the device 200 is also referred to as the device 200. The device 200may include a substrate 202 and various features formed therein orthereon. The substrate 202 is a silicon substrate in the presentembodiment. Alternatively, the substrate 202 may comprise anotherelementary semiconductor, such as germanium; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP,and/or GaInAsP; or combinations thereof. In yet another alternative, thesubstrate 202 is a semiconductor on insulator (SOI).

In some embodiments, the substrate 202 includes an insulator (or anisolation structure) that may be formed of silicon oxide, siliconnitride, silicon oxynitride, fluoride-doped silicate glass (FSG), alow-k dielectric material, and/or other suitable insulating material.The insulator may be shallow trench isolation (STI) features. In anembodiment, the insulator is formed by etching trenches in the substrate202, filling the trenches with an insulating material, and performing achemical mechanical planarization (CMP) process to the substrate 202including the insulating material. The substrate 202 may include otherisolation structure(s) such as field oxide and LOCal Oxidation ofSilicon (LOCOS). The substrate 202 may include a multi-layer isolationstructure.

At operation 104, the method 100 (FIG. 1) forms one or more FETs 204(e.g., FETs 204 a and 204 b) on the substrate 202 (FIG. 2A). The FETs204 may include n-type FETs, p-type FETs, or a combination thereof. Insome embodiments, FETs 204 a and 204 b are both n-type FETs or are bothp-type FETs. In alternative embodiments, FET 204 a is an n-type FET andFET 204 b is a p-type FET.

Each FET 204 includes a gate stack 208. The gate stack 208 is disposedover the substrate 202. In various embodiments, the gate stack 208 is amulti-layer structure. The gate stack 208 may include a gate dielectriclayer 210 and a gate electrode layer 212. In some embodiments, the gatedielectric layer 210 further includes a high-k dielectric layer and aninterfacial layer interposed between the substrate 202 and the high-kdielectric layer. In various embodiments, the interfacial layer mayinclude a dielectric material such as silicon oxide (SiO₂) or siliconoxynitride (SiON), and may be formed by chemical oxidation, thermaloxidation, atomic layer deposition (ALD), chemical vapor deposition(CVD), and/or other suitable methods. The high-k dielectric layer isformed by a suitable process such as an atomic layer deposition (ALD).Other methods to form the high-k dielectric layer include metal organicchemical vapor deposition (MOCVD), physical vapor deposition (PVD),UV-Ozone Oxidation and molecular beam epitaxy (MBE). In one embodiment,the high-k dielectric material includes hafnium oxide (HfO₂), zirconiumoxide (ZrO₂), lanthanum oxide (La₂O₃), titanium oxide (TiO₂), yttriumoxide (Y₂O₃), strontium titanate (SrTiO₃), other suitable metal-oxides,or combinations thereof. Alternatively, the high-k dielectric layerincludes metal nitrides or metal silicates.

In some embodiments, the gate electrode layer 212 may be a poly-siliconlayer or a metal gate electrode layer. The metal gate electrode layermay further include multiple layers, such as a work function metal layerand a metal fill layer. The work function metal layer may include ap-type work function metal layer or an n-type work function metal layer.The p-type work function metal layer comprises a metal selected from,but not limited to, the group of titanium nitride (TiN), tantalumnitride (TaN), ruthenium (Ru), molybdenum (Mo), tungsten (W), platinum(Pt), or combinations thereof. The n-type work function metal layercomprises a metal selected from, but not limited to, the group oftitanium (Ti), aluminum (Al), tantalum carbide (TaC), tantalumcarbonitride (TaCN), tantalum silicon nitride (TaSiN), or combinationsthereof. The p-type or n-type work function metal layer may furtherinclude a plurality of layers and may be deposited by CVD, PVD, and/orother suitable process. The one or more metal layers may includealuminum (Al), tungsten (W), cobalt (Co), copper (Cu), and/or othersuitable materials, and may be formed by CVD, PVD, plating, and/or othersuitable processes. The metal fill layer may include aluminum (Al),tungsten (W), or copper (Cu) and/or other suitable materials. The metalfill layer may be formed by CVD, PVD, plating, and/or other suitableprocesses.

A gate spacer is formed on sidewalls of each gate stack 208. Referringto FIG. 2A, in various embodiments, the gate spacer may include multiplelayers such as a seal spacer 214 and a dummy spacer 216. The seal spacer214 includes a dielectric material, such as silicon oxide (SiO₂),silicon nitride (SiN), silicon oxynitride (SiON), silicon carbonitride(SiCN), silicon carbon oxynitride (SiCON), other dielectric material, orcombination thereof. The seal spacer 214 protects the four approximatelyvertical sides of the gate stack 208. The dummy spacer 216 may composeof silicon oxide (SiO₂), aluminum oxide (AlO), silicon nitride (SiN),silicon oxynitride (SiON), silicon carbonitride (SiCN), silicon carbonoxynitride (SiCON). Generally, the composition of the seal spacer 214and the dummy spacer 216 are selected such that the seal spacer 214 hasa high etch selectivity as compared to the dummy spacer 216. The dummyspacer 216 will be removed in subsequent operations of the method 100 toform a void as an air-spacer, while the seal spacer 214 is substantiallyremained. Therefore, the dummy spacer 216 is also referred to as thesacrificial spacer 216. The forming of the air-spacer will be furtherdescribed in details later. In an example, the seal spacer 214 is formedby blanket depositing a dielectric layer (e.g., a silicon nitride layerhaving a substantially uniform thickness) over the device 200 by a CVDprocess and then anisotropically etching to remove portions of thedielectric layer to form the seal spacer 214. The sacrificial spacer 216may be formed with a similar process. In some embodiments, thesacrificial spacer 216 has a thickness in a range from about 2 nm toabout 4 nm.

The source/drain (S/D) regions 218 are also formed in the substrate 202.The S/D regions 218 may be n-type doped regions and/or p-type dopedregions for forming active devices. The S/D regions 218 may includeheavily doped S/D (HDD), lightly doped S/D (LDD), raised regions,strained regions, epitaxially grown regions, and/or other suitablefeatures. The S/D regions 218 may be formed by etching and epitaxialgrowth, S/D implantation, S/D activation, and/or other suitableprocesses. In an embodiment, the S/D regions 218 further includesilicidation or germanosilicidation. For example, silicidation may beformed by a process that includes depositing a metal layer, annealingthe metal layer such that the metal layer is able to react with siliconto form silicide, and then removing the non-reacted metal layer. In anembodiment, the device 200 includes fin-like active regions for formingmulti-gate FETs such as FinFETs. To further this embodiment, the S/Dregions 218 and the channel region 224 may be formed in or on the fins.The channel region 224 is under the gate stack 208 and interposedbetween a pair of S/D regions 218. The channel region 224 conductscurrents between the respective S/D regions 218 when the semiconductordevice 200 turns on, such as by biasing the gate electrode layer 212.

Still referring to FIG. 2A, in the present embodiment, the S/D regions218 are formed by first etching S/D recesses in the substrate 202followed by epitaxially growing S/D regions 218 in the respectiverecesses. Based on the profile of the S/D recesses, the S/D regions 218may have a substantially u-shaped profile and a sidewall of each of theS/D regions 218 is substantially aligned with the edge (or outerboundary) of the sacrificial spacer 216. The respective sidewall isspaced from the gate stack 208 by a distance 260. In some embodiments,the distance 260 is in a range from about 2 nm to about 10 nm. In someembodiment where the spacers 214/216 are thicker than desired whichenlarges the distance 260 and it is desired that the distance 260 fallsnonetheless into a shorter range, the S/D regions 218 can be formed tohave a substantially diamond-shaped profile, such as S/D regions 218 ain FIG. 2B. Referring to FIG. 2B, some sidewalls of the S/D regions 218a are extended towards the gate stack 208 underneath the spacers214/216. In one example, the S/D recesses are formed with an etchingprocess that includes both a dry etching and a wet etching process whereetching parameters thereof are tuned (such as etchants used, etchingtemperature, etching solution concentration, etching pressure, sourcepower, radio frequency (RF) bias voltage, RF bias power, etchant flowrate, and other suitable parameters) to achieve the desired recessesprofile. For the convenience of discussion, the device 200 with the S/Dregions in a shape as shown in FIG. 2A is used as an example forsubsequent operations. Persons having ordinary skill in the art shouldrecognize that the device 200 with the S/D regions in a shape as shownin FIG. 2B can also be used for the subsequent operations.

Referring back to FIG. 2A, in the present embodiment, the device 200includes a contact etch stop (CES) layer 220 over the substrate 202 andon sidewalls of the sacrificial spacer 216, and further includes aninter-layer dielectric (ILD) layer 222 over the CES layer 220. The CESlayer 220 may include a dielectric material such as silicon nitride(SiN), silicon oxide (SiO₂), silicon oxynitride (SiON), siliconcarbonitride (SiCN), silicon carbon oxynitride (SiCON), other dielectricmaterials, or combination thereof. The CES layer 220 may be formed by aplasma-enhanced CVD (PECVD) process and/or other suitable deposition oroxidation processes. The ILD layer 222 may include materials such as orsilicon oxide, doped silicon oxide such as borophosphosilicate glass(BPSG), tetraethylorthosilicate (TEOS) oxide, un-doped silicate glass,fused silica glass (FSG), phosphosilicate glass (PSG), boron dopedsilicon glass (BSG), low-k dielectric material, and/or other suitabledielectric materials. The ILD layer 222 may be deposited by a PECVDprocess, a flowable CVD (FCVD) process, or other suitable depositiontechnique. The composition of the CES layer 220 and the ILD layer 222are selected such that the CES layer 220 has some etch selectivity ascompared to the ILD layer 222. In an embodiment, the CES layer 220 isdeposited as a blanket layer over the substrate 202 covering variousstructures thereon, and the ILD layer 222 is deposited over the CESlayer 220. Subsequently, the method 100 (FIG. 1) proceeds to operation106 by performing a chemical mechanical planarization (CMP) process topolish the ILD layer 222 and expose the gate stack 208 (FIG. 2A). As aresult, portions of the CES layer 220 remain over the substrate 202between adjacent sacrificial spacers 216.

At operation 108, the method 100 (FIG. 1) forms another ILD layer 228over the device 200 (FIG. 3). The ILD layer 228 may include siliconoxide, low-k dielectric material, or other suitable dielectric material,formed by CVD or other suitable method. For example, the ILD layer 228may be formed by a PECVD process, a FCVD process, or other suitabledeposition processes. In some embodiments, the ILD layer 228 may includedifferent or same material as the ILD layer 222. A CMP process mayfollow operation 108 to remove excessive dielectric materials.

At operation 110, the method 100 (FIG. 1) patterns the ILD layer 228 toform the S/D via holes 230 over the S/D regions 218 (FIG. 4). In anembodiment, operation 110 includes a photolithography process andetching processes. The photolithography process may include forming aphotoresist (or resist) over the ILD layer 228, exposing the resist to apattern that defines various geometrical shapes for the S/D via holes230, performing post-exposure bake processes, and developing the resistto form a masking element including the resist. The masking element, ora derivative thereof, is then used for etching recesses into the ILDlayer 228. The masking element (e.g., a patterned resist) issubsequently removed. The etching processes may include one or more dryetching processes, wet etching processes, and other suitable etchingtechniques. For example, the etching processes may include a two-stepetching. The first etching step removes portions of the ILD layers 228and 222 to expose a bottom portion of the CES layer 220, and the secondetching step removes the bottom portion of the CES layer 220, therebyexposing a portion of the S/D regions 218. In some embodiments, the ILDlayer 222 is substantially completely removed in the operation 11.

At operation 112, the method 100 (FIG. 1) form one or more S/D contacts232 in the S/D via holes 230 (FIG. 5). In an embodiment, the S/Dcontacts 232 include a metal such as tungsten (W), aluminum (Al), copper(Cu), combinations thereof, or other suitable conductive material. In anembodiment, the contact metal is deposited using a suitable process,such as CVD, PVD, plating, and/or other suitable processes. A CMPprocess may follow operation 112 to remove excessive metals.

At operation 114, the ILD layer 228 is removed, forming openings 240that expose layers 214, 216, 220, and the gate stack 208, as shown inFIG. 6. In an embodiment, the operation 114 includes an etching processthat is tuned to etch the ILD layer 228 while the other layers, 214,216, 220, and the gate stack 208, remain substantially unchanged in theetching process. In embodiments, the operation 114 may use a dryetching, a wet etching, or other suitable etching processes.

The method 100 (FIG. 1) proceeds to operation 116 where trench 250 forcreating the air-spacer structure is formed (FIG. 7). Specifically thetrench 250 is formed by etching the sacrificial spacer 216. In anembodiment, the trench 250 is filled with air, forming an air gapbetween the seal spacer 214 and the CES layer 220. The sidewalls of theseal spacer 214 and the CES layer 220 are exposed in the trench 250.

Generally, the composition of the seal spacer 214 and the CES layer 220are selected such that the seal spacer 214 and the CES layer 220 has ahigh etch selectivity as compared to the sacrificial spacer 216. As aresult, the etching process may remove the sacrificial spacer 216 whilethe seal spacer 214 and the CES layer 220 remain relatively and/orsubstantially unchanged in thickness. In some embodiments, the sealspacer 214 and the CES layer 220 contains nitride (or nitride rich) andthe sacrificial spacer contains oxide (or oxide rich). For example, eachof the seal spacer 214 and the CES layer 220 may contain a compositionselected from a group of silicon nitride, silicon carbonitride, siliconoxynitride, silicon carbon oxynitride (tuned to be nitride rich), and acombination thereof, while the sacrificial spacer 216 may contain acomposition selected from a group of silicon oxide, aluminum oxide,silicon carbon oxynitride (tuned to be oxide rich), and a combinationthereof. The seal spacer 214 and the CES layer 220 may contain the sameor different materials. In one specific embodiment, the seal spacer 214contains silicon nitride, the CES layer 220 contains siliconcarbonitride, and the sacrificial spacer 216 contains aluminum oxide. Inanother specific embodiment, the seal spacer 214 contains siliconcarbonitride, the CES layer 220 contains silicon carbon oxynitride, andthe sacrificial spacer 216 contains aluminum oxide. In alternativeembodiments, the seal spacer 214 and the CES layer 220 contains oxide(or oxide rich) and the sacrificial spacer 216 contains nitride (ornitride rich). For example, each of the seal spacer 214 and the CESlayer 220 may contain a composition selected from a group of siliconoxide, aluminum oxide, silicon carbon oxynitride (tuned to be oxiderich), and a combination thereof, while the sacrificial spacer 216 maycontain a composition selected from a group of silicon nitride, siliconcarbonitride, silicon oxynitride, silicon carbon oxynitride (tuned to benitride rich), and a combination thereof. In yet another specificembodiment, the seal spacer 214 contains silicon oxide, the CES layer220 contains silicon carbon oxynitride, and the sacrificial spacer 216contains silicon nitride.

In embodiments, the operation 116 uses an etching process with anetchant to selectively remove the sacrificial spacer 216. The operation116 may use a dry etching, a wet etching, or other suitable etchingprocesses. For example, a dry etching process may implement anoxygen-containing gas, a fluorine-containing gas (e.g., CF₄, SF₆, CH₂F₂,CHF₃, and/or C₂F₆), a chlorine-containing gas (e.g., Cl₂, CHCl₃, CCl₄,and/or BCl₃), a bromine-containing gas (e.g., HBr and/or CHBR₃), aniodine-containing gas, other suitable gases and/or plasmas, and/orcombinations thereof. For example, a wet etching process may compriseetching in diluted hydrofluoric acid (DHF); potassium hydroxide (KOH)solution; ammonia; a solution containing hydrofluoric acid (HF), nitricacid (HNO₃), and/or acetic acid (CH₃COOH); or other suitable wetetchant. In one example, the sacrificial spacer 216 contains siliconoxide and the wet etching process includes applying DHF. In anotherexample, the sacrificial spacer 216 contains aluminum oxide and the wetetching process includes applying an ammonia and hydrogen peroxidemixture (APM) such as an SC1 solution (NH₄OH:H₂O₂:H₂O). In yet anotherexample, the sacrificial spacer 216 contains silicon nitride and the wetetching process includes applying an acid containing H₃PO₄.

The method 100 (FIG. 1) proceeds to operation 118 where a cap structurefor the air gap (void) is formed above the trench 250. Specifically, anILD layer 252 is deposited above the device 200, as shown in FIG. 8A.The ILD layer 252 also forms a cap or upper wall for the air gap in thetrench 250. In an embodiment, the ILD layer 252 is formed by chemicalvapor deposition (CVD), physical vapor deposition (PVD), coatingprocess, and/or other suitable process. In an embodiment, the ILD layer252 is deposited by a CVD process. The formation of the ILD layer 252 istuned to effectively close up the trench 250, resulting in the air gap.The parameters in the CVD process (e.g., pressure, temperature, and gasviscosity) are tuned in a way such that the gap fill behavior ofdepositing dielectric materials maintains the air gap without filling upthe trench 250. In the present embodiment, the CVD process employs asetting with pressure less than about 0.75 torr and temperature higherthan about 75 degree Celsius. Hence, the dielectric material of the ILDlayer 252 may be deposited at the upper portion of the trench 250 toenclose the opening of the trench 250 without a significant amount beingdeposited in a lower portion of the trench 250. Respective air gap cantherefore be formed below the dielectric material of the ILD layer 252and between the seal spacer 214 and the CES layer 220. The sidewalls ofthe seal spacer 214 and the CES layer 220 are exposed in the air gap. Agas, such as a gas(es) used during the deposition of the dielectricmaterial of the ILD layer 252 or any other species that can diffuse intothe air gap, may be in the air gap. The ILD layer 252 extends laterallyfrom the air gap to top surfaces of the seal spacer 214 and the gatestack 208. The ILd layer 252 also covers the CES layer 220 and the S/Dcontacts 232. In some embodiments, the ILD layer 252 may include siliconnitride, silicon oxynitride, silicon carbonitride. In some embodiments,the ILD layer 252 may include an oxide, such as TEOS, BPSG, FSG, PSG,and BSG. The ILD layer 252 may include different or same material as theILD layer 228. In the present embodiment, the ILD layer 252 is a siliconoxide layer.

Still referring to FIG. 8A, in some embodiments, substrate 202 isexposed in the trench 250 after the etching of the sacrificial layer216. Therefore, the air gap defined in the trench 250 spans horizontallyfrom a sidewall of the spacer layer 214 to a sidewall of the CES layer220, and spans vertically from a top surface of the substrate 202 to abottom surface of the ILD layer 252. In alternative embodiments, thesacrificially layer 216 may not be completely removed from the trench250 in the etching process (e.g., by controlling the etching time) andhave some residue 216 a remained in the bottom of the trench 250, whichstill covers the substrate 202, as shown in FIG. 8B. In this case, theair gap spans vertically from a bottom portion of the sacrificial layer216 to a bottom surface of the ILD layer 252, instead. In the presentembodiment, the air gap has a width in a range from about 2 nm to about4 nm. The air gap forms air-spacer structures surrounding the gate stack208, which helps reducing the effective dielectric constant of materiallayers between the gate stack 208 and the S/D contacts 232 and therebyreducing respective stray capacitance.

At operation 120, the method 100 (FIG. 1) performs another CMP processto polish the ILD layer 252 and expose the S/D contacts 232 (FIG. 9).Although not shown in FIG. 1, the method 100 may proceed to furtherprocesses in order to complete the fabrication of the device 200. Forexample, the method 100 may form multi-layer interconnect structure thatconnects the gate stacks 208 and the S/D contacts 232 with other partsof the device 200 to form a complete IC.

Although not intended to be limiting, one or more embodiments of thepresent disclosure provide many benefits to a semiconductor device andthe formation thereof, including fin-type field effect transistors(FinFETs). For example, the fins may be patterned to produce arelatively close spacing between features, for which the abovedisclosure is well suited. Spacers used in forming fins of FinFETs canbe processed according to the above disclosure. For example, embodimentsof the present disclosure provide a method of forming air-spacerssurrounding the gate stack. The relative permittivity (or dielectricconstant) between the gate stack and source/drain contacts is lower,which reduces interference, noise, and parasitic coupling capacitancebetween interconnects. Further, the disclosed methods can be easilyintegrated into existing semiconductor manufacturing processes.

In one exemplary aspect, the present disclosure is directed to a method.The method includes forming a gate structure on a substrate; forming aseal spacer covering a sidewall of the gate structure; forming asacrificial spacer covering a sidewall of the seal spacer; formingsource/drain (S/D) regions sandwiching a channel region that is underthe gate structure; depositing a contact etch stop (CES) layer coveringa sidewall of the sacrificial spacer; removing the sacrificial spacer toform a trench, wherein the trench spans between a sidewall of the CESlayer and the sidewall of the seal spacer; and depositing an inter-layerdielectric (ILD) layer, wherein the ILD layer caps the trench, therebydefining an air gap inside the trench.

In another exemplary aspect, the present disclosure is directed to amethod of forming a semiconductor device. The method includes forming agate stack on a semiconductor substrate; forming a seal spacer coveringa sidewall of the gate stack; forming a sacrificial spacer covering asidewall of the seal spacer; forming source/drain (S/D) regionssandwiching a channel region that is under the gate stack; forming acontact etch stop (CES) layer covering a sidewall of the sacrificialspacer; depositing a first inter-layer dielectric (ILD) layer over thegate stack; patterning the first ILD layer, thereby forming an openingexposing one of the S/D regions; forming an S/D contact in the opening;after the forming of the S/D contact, removing the sacrificial spacer toform a trench, wherein the trench exposes a sidewall of the CES layerand the sidewall of the seal spacer; and depositing a second ILD layerover the S/D contact, the seal spacer, and the gate stack, wherein thesecond ILD layer seals the trench, thereby defining a void inside thetrench.

In another exemplary aspect, the present disclosure is directed to asemiconductor device. The semiconductor device includes a substratehaving source/drain (S/D) regions with a channel region interposedtherebetween; a gate stack over the channel region; a spacer layercovering sidewalls of the gate stack; an S/D contact over one of the S/Dregions; a contact etch stop (CES) layer covering sidewalls of the S/Dcontact; and an inter-layer dielectric (ILD) layer covering the CESlayer, the spacer layer, and the gate stack, wherein the CES layer andthe spacer layer are spaced from each other, defining a gaptherebetween, the gap being capped by the ILD layer.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand the aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of theembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A method, comprising: providing a structurehaving a substrate, a gate structure over the substrate, a sacrificialspacer over a sidewall of the gate structure, a source/drain featureover the substrate and adjacent to the gate structure; forming adielectric layer over the gate structure, the sacrificial spacer, andthe source/drain feature; with the dielectric layer over the gatestructure, the sacrificial spacer, and the source/drain feature, forminga contact extending through the dielectric layer to the source/drainfeature; removing the dielectric layer to expose the sacrificial spacer;etching the sacrificial spacer to form a trench; and depositing aninter-layer dielectric (ILD) layer, wherein the ILD layer caps thetrench, thereby defining an air gap inside the trench.
 2. The method ofclaim 1, wherein the structure further includes a seal spacer betweenthe sacrificial spacer and the sidewall of the gate structure, andwherein the etching of the sacrificial spacer exposes a sidewall of theseal spacer.
 3. The method of claim 1, wherein the structure furtherincludes a contact etch stop layer over the source/drain feature andover a sidewall of the sacrificial spacer, and wherein the etching ofthe sacrificial spacer exposes a sidewall of the contact etch stoplayer.
 4. The method of claim 1, wherein a top surface of the contact isabove a top surface of the gate structure after the removing of thedielectric layer to expose the sacrificial spacer.
 5. The method ofclaim 1, wherein the structure further includes a fin for a FinFET,wherein the gate structure and the source/drain feature are formed overthe fin.
 6. The method of claim 1, wherein the etching of thesacrificial spacer partially removes the sacrificial spacer from thestructure, leaving a portion of the sacrificial spacer at a bottom ofthe trench.
 7. The method of claim 1, wherein the sacrificial spacerincludes silicon oxide, aluminum oxide, silicon nitride, siliconoxynitride, silicon carbonitride, or silicon carbon oxynitride.
 8. Themethod of claim 1, further comprising: after the depositing of the ILDlayer, performing a chemical mechanical planarization (CMP) process tothe ILD layer to expose the contact.
 9. The method of claim 1, wherein asidewall of the source/drain feature is substantially aligned with anedge of the sacrificial spacer.
 10. The method of claim 1, wherein asidewall of the source/drain feature extends laterally under thesacrificial spacer.
 11. A method, comprising: providing a structureincluding a semiconductor substrate, a gate stack over the semiconductorsubstrate, a source/drain feature adjacent to the gate stack, a firstinter-layer dielectric (ILD) layer over the source/drain feature, and asacrificial spacer between the first ILD layer and the gate stack;depositing a second ILD layer over the gate stack, the sacrificialspacer, and the first ILD layer; forming an opening through at least thefirst and the second ILD layers, the opening exposing the source/drainfeature; with the second ILD layer over the gate stack and thesacrificial spacer, forming a contact in the opening; removing thesecond ILD layer to expose the sacrificial spacer; etching thesacrificial spacer to form a trench; and depositing a third ILD layerover the contact and the gate stack, wherein the third ILD layer coversthe trench, thereby defining a void inside the trench.
 12. The method ofclaim 11, wherein the structure further includes a contact etch stoplayer between the first ILD layer and the source/drain feature andbetween the first ILD layer and the sacrificial spacer.
 13. The methodof claim 12, wherein the etching of the sacrificial spacer exposes asidewall of the contact etch stop layer.
 14. The method of claim 11,wherein the sacrificial spacer includes silicon oxide, aluminum oxide,silicon nitride, silicon oxynitride, silicon carbonitride, or siliconcarbon oxynitride.
 15. The method of claim 11, wherein the etching ofthe sacrificial spacer completely removes the sacrificial spacer fromthe structure, thereby exposing a surface of the semiconductorsubstrate.
 16. The method of claim 11, wherein the trench has a width ina range from about 2 nm to about 4 nm.
 17. A method of forming a FinFETdevice, the method comprising: providing a structure having a fin, agate stack and a source/drain feature over the fin, a first dielectriclayer over the source/drain feature, a first spacer over a sidewall ofthe gate stack, and a sacrificial spacer between the first dielectriclayer and the first spacer; depositing a first inter-layer dielectric(ILD) layer over the gate stack, the sacrificial spacer, and the firstdielectric layer; forming an S/D contact extending through at least thefirst ILD layer and the first dielectric layer to contact thesource/drain feature; removing the first ILD layer to expose thesacrificial spacer, while the S/D contact remains extending above thegate stack; etching the sacrificial spacer to form a trench; anddepositing a second ILD layer over the S/D contact, the first spacer,and the gate stack, wherein the second ILD layer seals the trench and isin physical contact with the first spacer, thereby defining a voidinside the trench.
 18. The method of claim 17, wherein the sacrificialspacer has a width in a range from about 2 nm to about 4 nm.
 19. Themethod of claim 17, wherein the etching of the sacrificial spacerpartially removes the sacrificial spacer from the structure, leaving aportion of the sacrificial spacer at a bottom of the trench.
 20. Themethod of claim 17, wherein the first dielectric layer includes anitride layer over the source/drain feature and an oxide layer over thenitride layer.